IEEE - Institute of Electrical and Electronics Engineers, Inc. - COSS Measurements for Superjunction MOSFETs: Limitations and Opportunities

Author(s): Grayson D. Zulauf ; Jaume Roig-Guitart ; James D. Plummer ; Juan M. Rivas-Davila
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 7
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2880952
Regular:

Small-signal measurements of output capacitance (COSS) are ubiquitous in power semiconductor datasheets and determine critical features of power converters. For silicon superjunction power MOSFETs... View More

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