IEEE - Institute of Electrical and Electronics Engineers, Inc. - TEM based dislocation auto analysis flow of advanced logic devices

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Author(s): Seon-Young Lee ; Ilgyou Shin ; Sung-Bo Shim ; Alexander Schmidt ; Inkook Jang ; Dae Sin Kim
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Conference Location: Austin, TX, USA, USA
Conference Date: 24 September 2018
Page(s): 97 - 100
ISBN (Electronic): 978-1-5386-6790-3
ISSN (Electronic): 1946-1577
DOI: 10.1109/SISPAD.2018.8551698
Regular:

Automatic flow of transmission electron microscopy (TEM)-based dislocation analysis on Source/Drain (S/D) and contact formation process is developed. Based on the previously developed model of... View More

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