IEEE - Institute of Electrical and Electronics Engineers, Inc. - N7 FinFET Self-Aligned Quadruple Patterning Modeling

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Author(s): Sylvain Baudot ; Sofiane Guissi ; Alexey P. Milenin ; Joseph Ervin ; Tom Schram
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Conference Location: Austin, TX, USA, USA
Conference Date: 24 September 2018
Page(s): 344 - 347
ISBN (Electronic): 978-1-5386-6790-3
ISSN (Electronic): 1946-1577
DOI: 10.1109/SISPAD.2018.8551646
Regular:

In this paper, we model fin pitch walk based on a process flow simulation using the Coventor SEMulator3D virtual platform. A taper angle of the fin core is introduced into the model to provide... View More

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