IEEE - Institute of Electrical and Electronics Engineers, Inc. - Simulation of Quantum Current in Double Gate MOSFETs: Vortices in Electron Transport

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Author(s): Pratik B. Vyas ; Maarten L. Van de Put ; Massimo V. Fischetti
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Conference Location: Austin, TX, USA, USA
Conference Date: 24 September 2018
Page(s): 1 - 4
ISBN (Electronic): 978-1-5386-6790-3
ISSN (Electronic): 1946-1577
DOI: 10.1109/SISPAD.2018.8551729
Regular:

Quantum simulation of electronic transport in double gate (DG) field-effect transistors (FETs) and FinFETs is usually deemed to be required as the devices are scaled to the nanometer length-scale.... View More

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