IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Path to Energy Efficiency and Reliability for ICs: Fully Depleted Silicon-on-Insulator (FD-SOI) Devices Offer Many Advantages

Author(s): Bich-Yen Nguyen ; Philippe Flatresse ; Jamie Schaeffer ; Franck Arnaud ; Souhir Mhira ; Vincent Huart ; Olivier Weber ; Manuel Sellier ; Christophe Maleville
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2018
Volume: 10
Page(s): 24 - 33
ISSN (Electronic): 1943-0590
ISSN (Paper): 1943-0582
DOI: 10.1109/MSSC.2018.2867405
Regular:

Fully depleted silicon-on-insulator (FD-SOI) devices built on an ultrathin SOI layer on a buried-oxide (BOX) substrate feature unique performance capabilities and are suitable for... View More

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