IEEE - Institute of Electrical and Electronics Engineers, Inc. - III-V Semiconductor Unipolar Barrier Infrared Detectors

2018 IEEE Photonics Conference (IPC)

Author(s): David Z. Ting
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Conference Location: Reston, VA, USA, USA
Conference Date: 30 September 2018
Page(s): 1 - 2
ISBN (Electronic): 978-1-5386-5358-6
ISSN (Electronic): 2575-274X
DOI: 10.1109/IPCon.2018.8527160
Regular:

The II-VI semiconductor HgCdTe (MCT) is the most successful infrared photodetector material to date. MCT grown on nearly lattice-matched CdZnTe (CZT) substrate offers continuous cutoff wavelength... View More

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