IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fast C-V method to mitigate effects of deep levels in CIGS doping profiles

2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)

Author(s): P.K. Paul ; J. Bailey ; G. Zapalac ; A.R. Arehart
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2017
Conference Location: Washington, DC, USA
Conference Date: 25 June 2017
Page(s): 2,414 - 2,418
ISBN (Electronic): 978-1-5090-5605-7
DOI: 10.1109/PVSC.2017.8366494
Regular:

In this work, methods to determine more accurate doping profiles in semiconductors is explored where trap-induced artifacts such as hysteresis and doping artifacts are observed. Specifically in... View More

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