IEEE - Institute of Electrical and Electronics Engineers, Inc. - Nanometer-Scale Carrier Imaging of Potential-Induced Degradation in c-Si Solar Cells

2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)

Author(s): C.-S Jiang ; C. Xiao ; H. R. Moutinho ; S. Johnston ; M. M. Al-Jassim ; X. Yang ; Y. Chen ; J. Ye
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2017
Conference Location: Washington, DC, USA
Conference Date: 25 June 2017
Page(s): 2,785 - 2,788
ISBN (Electronic): 978-1-5090-5605-7
DOI: 10.1109/PVSC.2017.8366039
Regular:

We report on nm-resolution imaging of chargecarrier distribution around local potential-induced degradation (PID) defects using scanning capacitance microscopy. We imaged cross sections of heavily... View More

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