IEEE - Institute of Electrical and Electronics Engineers, Inc. - Photoluminescence Properties of In-Plane Ultrahigh-Density InAs Quantum Dots on GaAsSb/GaAs(001) for Solar Cell Applications

2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)

Author(s): Ryo Sugiyama ; Naoki Akimoto ; Tomah Sogabe ; Koichi Yamaguchi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2017
Conference Location: Washington, DC, USA
Conference Date: 25 June 2017
Page(s): 712 - 715
ISBN (Electronic): 978-1-5090-5605-7
DOI: 10.1109/PVSC.2017.8366052
Regular:

In-plane ultrahigh-density InAs quantum dots (QDs) were grown on GaAsSb/GaAs(001) for intermediated-band solar cell applications. Photoluminescence (PL) spectra under 785-nm-light excitation were... View More

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