IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of luminescence coupling between InGaP and GaAs subcells to external quantum efficiency in triple-junction solar cells

2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)

Author(s): Mitsunobu Sugai ; Mitsuru Imaizumi ; Tetsuya Nakamura ; Takeshi Ohshima
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2017
Conference Location: Washington, DC, USA
Conference Date: 25 June 2017
Page(s): 567 - 571
ISBN (Electronic): 978-1-5090-5605-7
DOI: 10.1109/PVSC.2017.8366048
Regular:

Luminescence coupling, which is reabsorption of recombination radiation in multi-junction solar cell, induces artifact response on external quantum efficiency (EQE). We have been investigated the... View More

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