IEEE - Institute of Electrical and Electronics Engineers, Inc. - InP Quantum Dot Intermediate Band Solar Cell Grown via MOCVD

2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)

Author(s): Hyun Kum ; Yushuai Dai ; Michael Slocum ; Zachary Bittner ; Seth Hubbard
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2017
Conference Location: Washington, DC, USA
Conference Date: 25 June 2017
Page(s): 677 - 680
ISBN (Electronic): 978-1-5090-5605-7
DOI: 10.1109/PVSC.2017.8366473
Regular:

Growth of type-II InP quantum dots in wide bandgap InGaP (EG = 1.85 eV) for intermediate band solar cell applications is studied, grown via Aixtron close-coupled showerhead metal-organic chemical... View More

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