IEEE - Institute of Electrical and Electronics Engineers, Inc. - High efficiency single-junction InGaP photovoltaic devices under low intensity light illumination

2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)

Author(s): Yushuai Dai ; Hyun Kum ; Michael A. Slocum ; George T. Nelson ; Seth M. Hubbard
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2017
Conference Location: Washington, DC, USA
Conference Date: 25 June 2017
Page(s): 222 - 225
ISBN (Electronic): 978-1-5090-5605-7
DOI: 10.1109/PVSC.2017.8366547
Regular:

The fabricated single junction InGaP photovoltaic devices show an overall 30% conversion efficiency under 1.27 uW/cm2 illumination. The development not only enables long lifetime... View More

Advertisement