IEEE - Institute of Electrical and Electronics Engineers, Inc. - Large-Area Junction Damage in Potential-Induced Degradation of c-Si Solar Modules

2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)

Author(s): Chuanxiao Xiao ; Chun-Sheng Jiang ; Steve Johnston ; Steve P. Harvey ; Peter Hacke ; Brian Gorman ; Mowafak Al-Jassim
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2017
Conference Location: Washington, DC, USA
Conference Date: 25 June 2017
Page(s): 1,371 - 1,375
ISBN (Electronic): 978-1-5090-5605-7
DOI: 10.1109/PVSC.2017.8366015
Regular:

We report a large area of millimeter-scale p-n junction damage caused by potential-induced degradation (PID) of lab-stressed crystalline-Si modules. Kelvin probe force microscopy results show... View More

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