IEEE - Institute of Electrical and Electronics Engineers, Inc. - Influence of AGS Layer Insertion at Absorber/ITO Interface on Structural and Photovoltaic Properties of Ultrathin Cu(In,Ga)Se2 Solar Cells

2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)

Author(s): Muhammad Saifullah ; Jihye Gwak ; Kihwan Kim ; Joo Hyung Park ; JunSik Cho ; Jae Ho Yun
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2017
Conference Location: Washington, DC, USA
Conference Date: 25 June 2017
Page(s): 810 - 814
ISBN (Electronic): 978-1-5090-5605-7
DOI: 10.1109/PVSC.2017.8366433
Regular:

The insertion of a sulfurized-AgGa (AGS) layer at Cu(In,Ga)Se2 (CIGSe)/ITO interface was found effective in improving the PV properties of ~300 nm thick CIGSe (Eg ≈ 1.5... View More

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