IEEE - Institute of Electrical and Electronics Engineers, Inc. - Simulation of drive-level capacitance profiling to interpret measurements on Cu(In, Ga)Se 2 Schottky devices

2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)

Author(s): Geordie Zapalac ; Jeff Bailey
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2017
Conference Location: Washington, DC, USA
Conference Date: 25 June 2017
Page(s): 3,327 - 3,332
ISBN (Electronic): 978-1-5090-5605-7
DOI: 10.1109/PVSC.2017.8366691
Regular:

A simulation is presented for drive-level capacitance profiling (DLCP) of Schottky diodes that allows a continuous distribution of defect states in both energy and depth. The simulation is used to... View More

Advertisement