IEEE - Institute of Electrical and Electronics Engineers, Inc. - Epitaxial GaP Layers Grown on Si Substrates using Migration Enhanced and Molecular Beam Epitaxy

2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)

Author(s): Chaomin Zhang ; Allison Boley ; Nikolai Faleev ; David J. Smith ; Christiana B. Honsberg
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2017
Conference Location: Washington, DC, USA
Conference Date: 25 June 2017
Page(s): 2,573 - 2,575
ISBN (Electronic): 978-1-5090-5605-7
DOI: 10.1109/PVSC.2017.8366227
Regular:

This study compares the microstructure of epitaxial GaP/Si heterostructures grown using the migration-enhanced epitaxy (MEE) and molecular beam epitaxy (MBE) techniques. High-resolution X-ray... View More

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