IEEE - Institute of Electrical and Electronics Engineers, Inc. - Switching Dynamics of Ferroelectric Zr-Doped HfO2

Author(s): Cristobal Alessandri ; Pratyush Pandey ; Angel Abusleme ; Alan Seabaugh
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2018
Volume: 39
Page(s): 1,780 - 1,783
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2018.2872124
Regular:

Ferroelectric Zr-doped HfO2 (HZO) is a promising candidate for steep slope transistors and memory technology. For these applications, it is essential to understand and optimize the... View More

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