IEEE - Institute of Electrical and Electronics Engineers, Inc. - Write Disturb in Ferroelectric FETs and Its Implication for 1T-FeFET AND Memory Arrays

Author(s): Kai Ni ; Xueqing Li ; Jeffrey A. Smith ; Matthew Jerry ; Suman Datta
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2018
Volume: 39
Page(s): 1,656 - 1,659
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2018.2872347
Regular:

In this letter, the write disturb of Hf0.5Zr0.5O2-based 1T-FeFET nonvolatile AND memory array is experimentally investigated for ${V}_{W}$ /2 and ${V}_{W}$ /3... View More

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