IEEE - Institute of Electrical and Electronics Engineers, Inc. - First Experimental Demonstration and Mechanism of Abnormal Palladium Diffusion Induced by Excess Interstitial Ge

Author(s): Chen-Han Chou ; An-Shih Shih ; Shao-Cheng Yu ; Yu-Hsi Lin ; Yi-He Tsai ; Chiung-Yuan Lin ; Wen-Kuan Yeh ; Chao-Hsin Chien
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2018
Volume: 39
Page(s): 1,632 - 1,635
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2018.2871714
Regular:

This letter represents the first direct experimental demonstrations and mechanism proposal regarding abnormal palladium diffusion into germanium (Ge). Our experiments indicated that excess Ge... View More

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