IEEE - Institute of Electrical and Electronics Engineers, Inc. - Simulation Study of a p-LDMOS With Double Electron Paths to Enhance Current Capability

Author(s): Bo Yi ; Moufu Kong ; Junji Cheng
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2018
Volume: 39
Page(s): 1,700 - 1,703
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2018.2870582
Regular:

In this letter, a p-channel lateral double-diffused MOSFET (p-LDMOS) with double electron paths used to enhance the current capability is proposed. The proposed p-LDMOS has two n-channels that are... View More

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