IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling of Read-Disturb-Induced SET-State Current Degradation in a Tungsten Oxide Resistive Switching Memory

Author(s): Po-Cheng Su ; Cheng-Min Jiang ; Chih-Wei Wang ; Tahui Wang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2018
Volume: 39
Page(s): 1,648 - 1,651
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2018.2868472
Regular:

We characterize SET-state current degradation induced by read operations in a tungsten oxide resistive memory cell. The current degradation exhibits a two-stage evolution. In the second stage, the... View More

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