IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio

Author(s): Yaxuan Liu ; Lulu Du ; Guangda Liang ; Wenxiang Mu ; Zhitai Jia ; Mingsheng Xu ; Qian Xin ; Xutang Tao ; Aimin Song
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2018
Volume: 39
Page(s): 1,696 - 1,699
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2018.2872017
Regular:

A high-performance solar-blind photodetector based on Cr-doped gallium oxide (Ga2O3) has been fabricated. A 140-nm-thick Ga2O3 layer was mechanically... View More

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