IEEE - Institute of Electrical and Electronics Engineers, Inc. - Device Modeling of MgO-Barrier Tunneling Magnetoresistors for Hybrid Spintronic-CMOS

Author(s): Siming Zuo ; Kianoush Nazarpour ; Hadi Heidari
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2018
Volume: 39
Page(s): 1,784 - 1,787
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2018.2870731
Regular:

Spintronic sensors, which are based on the tunneling-magnetoresistive (TMR) effect, have been utilized in detecting low-magnetic fields. However, still no computer-based model of these... View More

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