IEEE - Institute of Electrical and Electronics Engineers, Inc. - Radiation Effect on the Electron Transport Properties of SiO 2 /Si Interface: Role of Si Dangling-Bond Defects and Oxygen Vacancy

2018 IEEE 2nd International Conference on Dielectrics (ICD)

Author(s): Guanghao Qu ; Daomin Min ; Zhonghua Zhao ; Michel Frechette ; Shengtao Li
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2018
Conference Location: Budapest, Hungary
Conference Date: 1 July 2018
Page(s): 1 - 4
ISBN (Electronic): 978-1-5386-6389-9
ISBN (USB): 978-1-5386-6388-2
DOI: 10.1109/ICD.2018.8468353
Regular:

Radiation effect of electronic devices is a complex issue that attracted a lot of interest in the area of aviation industry and nuclear engineering. In order to investigate the relationship... View More

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