IEEJ Industry Application Society - Modeling and model parameter extraction of wide bandgap power semiconductor device, package, and circuit for simulating fast switching behavior

2018 International Power Electronics Conference (IPEC-Niigata 2018-ECCE Asia)

Author(s): Tsuyoshi Funaki
Publisher: IEEJ Industry Application Society
Publication Date: 1 May 2018
Conference Location: Niigata, Japan
Conference Date: 20 May 2018
Page(s): 2,181 - 2,185
ISBN (Electronic): 978-4-88686-405-5
ISBN (USB): 978-4-88686-403-1
DOI: 10.23919/IPEC.2018.8507805
Regular:

Wide band gap power semiconductor devices have superiority in fast switching operation, when compared to Si IGBT and PiN diodes for voltage range from several hundred to several kilo volts. The... View More

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