IEEE - Institute of Electrical and Electronics Engineers, Inc. - The First Compact Model to Determine VT Distribution for DG-FinFET Due to LER

Author(s): Amita ; S. Mittal ; U. Ganguly
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 8
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2870282
Regular:

We report the first compact model to estimate the VT distribution of double gate-FinFET due to line edge roughness. We derive closed-form expressions, representing the compact model, for: 1) mean... View More

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