IEEE - Institute of Electrical and Electronics Engineers, Inc. - RBER aware Multi-Sensing for Improving Read Performance of 3D MLC NAND Flash Memory

Author(s): Meng Zhang ; Fei Wu ; Xubin Chen ; Yajuan Du ; Weihua Liu ; Yahui Zhao ; Jiguang Wan ; Changsheng Xie
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 2169-3536
DOI: 10.1109/ACCESS.2018.2873081
Regular:

3D-multi-level cell (MLC) NAND flash memory adopts three-dimensional stack technology and stores two bits per cell, leading to improved storage capacities, but sacrificing data reliability.... View More

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