IEEE - Institute of Electrical and Electronics Engineers, Inc. - High Aspect Plasmonic Nanotrench Structures as Sensors in the Near- and Mid-IR Frequency Range

2018 20th International Conference on Transparent Optical Networks (ICTON)

Author(s): Evgeniy Shkondin ; Taavi Repan ; Radu Malureanu ; Andrei V. Lavrinenko ; Osamu Takayama
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2018
Conference Location: Bucharest, Romania, Romania
Conference Date: 1 July 2018
Page(s): 1 - 3
ISBN (Electronic): 978-1-5386-6605-0
ISBN (USB): 978-1-5386-6604-3
ISSN (Electronic): 2161-2064
DOI: 10.1109/ICTON.2018.8473579
Regular:

Titanium nitride (TiN) and aluminum-doped zinc oxide (AZO) high-aspect trench structures are fabricated using a combination of deep reactive ion etching and atomic layer deposition. These... View More

Advertisement