IEEE - Institute of Electrical and Electronics Engineers, Inc. - Delta Doping in HgCdTe-Based Unipolar Barrier Photodetectors

Author(s): Nima Dehdashti Akhavan ; Gilberto Armando Umana-Membreno ; Renjie Gu ; Jarek Antoszewski ; Lorenzo Faraone
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2018
Volume: 65
Page(s): 4,340 - 4,345
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2861378
Regular:

A method is described whereby the valence band (VB) discontinuity that is present in mercury cadmium telluride (HgCdTe)-based alloy-barrier nBn detectors can be minimized. It is numerically... View More

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