IEEE - Institute of Electrical and Electronics Engineers, Inc. - Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors

Author(s): Qinghua Han ; Thomas C. U. Tromm ; Michael Hoffmann ; Paulus Aleksa ; Uwe Schroeder ; Juergen Schubert ; Siegfried Mantl ; Qing-Tai Zhao
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2018
Volume: 65
Page(s): 4,641 - 4,645
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2863727
Regular:

The subthreshold behavior of floating-gate MOSFETs connected with ferroelectric capacitors (FeCs) was investigated experimentally and theoretically. We found that the subthreshold swing (SS)... View More

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