IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effective Concentration Profile: Mechanism of Gate Field-Plate Assistant Effect in SOI Lateral Power Devices

Author(s): Jun Zhang ; Yu-Feng Guo ; David Z. Pan
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2018
Volume: 65
Page(s): 4,476 - 4,482
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2866393
Regular:

The field-plate (FP) technique suppresses the electric field crowding at the p-n junction by inducing the interface charges in the drift region. However, due to the modeling difficulty, the... View More

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