IEEE - Institute of Electrical and Electronics Engineers, Inc. - Intrinsic Difference Between 2-D Negative-Capacitance FETs With Semiconductor-on-Insulator and Double-Gate Structures

Author(s): Wei-Xiang You ; Pin Su
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2018
Volume: 65
Page(s): 4,196 - 4,201
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2866125
Regular:

With the aid of an analytical and general model, this paper investigates the intrinsic difference in the negative-capacitance (NC) effect and design space between semiconductor-on-insView More

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