IEEE - Institute of Electrical and Electronics Engineers, Inc. - Variable-Channel Junctionless Poly-Si FETs: Demonstration and Investigation With Different Body Doping Concentrations

Author(s): Jer-Yi Lin ; Chan-Yi Tsai ; Chiuan-Huei Shen ; Chun-Chih Chung ; Malkundi Puttaveerappa Vijay Kumar ; Tien-Sheng Chao
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 39
Page(s): 1,326 - 1,329
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2018.2858227
Regular:

In this letter, tri-gate polycrystalline silicon variable-channel junctionless transistors (VC-JLTs), which consist of a counter-doped p-type body below an n+ active device layer, are... View More

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