IEEE - Institute of Electrical and Electronics Engineers, Inc. - Broadband Terahertz Power Detectors Based on 90-nm Silicon CMOS Transistors With Flat Responsivity Up to 2.2 THz

Author(s): Kestutis Ikamas ; Dovile Cibiraite ; Alvydas Lisauskas ; Maris Bauer ; Viktor Krozer ; Hartmut G. Roskos
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 39
Page(s): 1,413 - 1,416
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2018.2859300
Regular:

We present broadband high sensitivity terahertz (THz) detectors based on 90 nm CMOS technology with the state-of-the-art performance. The devices are based on bow-tie and log-spiral... View More

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