IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Full-Range Analytical Current Model for Heterojunction TFET With Dual Material Gate

Author(s): Yunhe Guan ; Zunchao Li ; Wenhao Zhang ; Yefei Zhang ; Feng Liang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 5
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2870171
Regular:

In this brief, based on the Gaussian quadrature method, we develop an analytical drain current model for the dual-material-gate heterojunction tunnel field-effect transistor (DMG-H-TFET) due to... View More

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