IEEE - Institute of Electrical and Electronics Engineers, Inc. - TCAD Simulation for Nonresonant Terahertz Detector Based on Double-Channel GaN/AlGaN High-Electron-Mobility Transistor

Author(s): Qingzhi Meng ; Qijing Lin ; Weixuan Jing ; Feng Han ; Man Zhao ; Zhuangde Jiang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 7
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2869291
Regular:

We propose a nonresonant terahertz (THz) detector based on double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) utilizing a technology computer-aided design platform. The... View More

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