IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Novel Non-Intrusive Technique for BTI Characterization in SiC MOSFETs

Author(s): Jose Angel Ortiz Gonzalez ; Olayiwola Alatise
Sponsor(s): IEEE Power Electronics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1941-0107
ISSN (Paper): 0885-8993
DOI: 10.1109/TPEL.2018.2870067
Regular:

Threshold voltage ( $V_{TH}$ ) shift due to Bias Temperature Instability (BTI) is a well-known problem in SiC-MOSFETs that occurs due to oxide traps in the $SiC/SiO_2$ gate interface. The reduced... View More

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