IEEE - Institute of Electrical and Electronics Engineers, Inc. - Hot-Carrier Degradation in Power LDMOS: Drain Bias Dependence and Lifetime Evaluation

Author(s): Andrea Natale Tallarico ; Susanna Reggiani ; Riccardo Depetro ; Stefano Manzini ; Andrea Mario Torti ; Giuseppe Croce ; Enrico Sangiorgi ; Claudio Fiegna
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 4
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2867650
Regular:

In this brief, we present an analysis of the degradation induced by hot-carrier stress in new generation power lateral double-diffused MOSFET (LDMOS) transistors. When a relatively high drain... View More

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