IEEE - Institute of Electrical and Electronics Engineers, Inc. - KMC Simulation of the Electroforming, Set and Reset Processes in Redox-based Resistive Switching Devices

Author(s): Elhameh Abbaspour ; Stephan Menzel ; Alexander Hardtdegen ; Susanne Hoffmann-Eifert ; Christoph Jungemann
Sponsor(s): IEEE Nanotechnology Council
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1941-0085
ISSN (Paper): 1536-125X
DOI: 10.1109/TNANO.2018.2867904
Regular:

This paper presents a physical model to investigate the electroforming, set and reset processes in Redox-based resistive switching RAM (ReRAM) based on the valence change mechanism. The model uses... View More

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