IEEE - Institute of Electrical and Electronics Engineers, Inc. - AlInN for Vertical Power Electronic Devices

Author(s): Matthew R. Peart ; Nelson Tansu ; Jonathan J. Wierer
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 6
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2866980
Regular:

The known benefits and challenges of AlInN as a next-generation power electronic semiconductor are presented. AlₓIn₁₋ₓN is lattice matched to GaN at x = 0.82 and has the... View More

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