IEEE - Institute of Electrical and Electronics Engineers, Inc. - Thin-Film Heterojunction FETs on Poly-Si Substrates for High-Stability Driving and Low-Power Amplification

Author(s): Bahman Hekmatshoar
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2018.2868176
Regular:

Thin-film heterojunction field-effect transistor (HJFET) devices with hydrogenated amorphous Si gate, and hydrogenated poly-Si source/drain regions are demonstrated on small-grain poly-Si... View More

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