IEEE - Institute of Electrical and Electronics Engineers, Inc. - Disposable Gate AlGaN/GaN High Electron Mobility Sensor for Trace-Level Biological Detection

Author(s): Shuai Yang ; Le Gu ; Xiangzhen Ding ; Bin Miao ; Zhiqi Gu ; Lanying Yang ; Jiadong Li ; Dongmin Wu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2018.2868433
Regular:

In this report, we propose a highly reliable biosensor based on the disposable gate (DG) AlGaN/GaN high electron mobility transistor (HEMT) sensor. The greatest advantage of this device is that... View More

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