IEEE - Institute of Electrical and Electronics Engineers, Inc. - Computation of Pinched Hysteresis Loop Area from Memristance-vs-State Map

Author(s): Anamarija Juhas ; Stanisa Dautovic
Sponsor(s): IEEE Circuits and Systems Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-3791
ISSN (Paper): 1549-7747
DOI: 10.1109/TCSII.2018.2868384
Regular:

The voltage-current characteristic of memristor driven by sinusoidal signal has the shape of hysteresis loop pinched at the origin. The lobe area of the hysteresis loop has been computed so far... View More

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