IEEE - Institute of Electrical and Electronics Engineers, Inc. - As-grown-Generation Model for Positive Bias Temperature Instability

Author(s): Rui Gao ; Zhigang Ji ; Jian Fu Zhang ; John Marsland ; Wei Dong Zhang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,662 - 3,668
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2857000
Regular:

Positive bias temperature instability (PBTI) is poised to cause significant degradation to nFETs with deep scaling into nanometers. It is commonly modeled by a power law fitted with measured... View More

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