IEEE - Institute of Electrical and Electronics Engineers, Inc. - Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors

Author(s): Manh-Cuong Nguyen ; An Hoang Thuy Nguyen ; Hyungmin Ji ; Jonggyu Cheon ; Jin-Hyun Kim ; Kyoung-Moon Yu ; Seong-Yong Cho ; Sang-Woo Kim ; Rino Choi
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,786 - 3,790
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2859224
Regular:

A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal-oxide-semiconductor thin-film transistors (TFTs). The... View More

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