IEEE - Institute of Electrical and Electronics Engineers, Inc. - Optimization of ${V}_{\text{CE}}$ Plateau for Deep-Oxide Trench SOI Lateral IGBT During Inductive Load Turn-OFF

Author(s): Long Zhang ; Jing Zhu ; Shilin Cao ; Jie Ma ; Shaohong Li ; Siyang Liu ; Weifeng Sun ; Jianfeng Zhao ; Longxing Shi
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,862 - 3,868
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2857838
Regular:

Collector-emitter voltage ( ${V}_{\textsf {CE}}$ ) plateau of the 500-V deep-oxide trench (DOT) silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) during inductive... View More

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