IEEE - Institute of Electrical and Electronics Engineers, Inc. - The Investigation of an IGBT With Hole-Carrier Movement Control

Author(s): Junhong Li ; Kun Xiao ; Bin Hu ; Kuifang Liu ; Rongzhou Zeng
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,839 - 3,847
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2859226
Regular:

A novel hole-controlled lateral-insulated-gate bipolar transistor (HC-LIGBT) device that is free of tail current is proposed and investigated. The device utilizes a poly-p-i-n-diode as the... View More

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