IEEE - Institute of Electrical and Electronics Engineers, Inc. - Cryogenic MOS Transistor Model

Author(s): Arnout Beckers ; Farzan Jazaeri ; Christian Enz
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,617 - 3,625
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2854701
Regular:

This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong... View More

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