IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis and Modeling of Temperature and Bias Dependence of Current Mismatch in Halo-Implanted MOSFETs

Author(s): Chetan Gupta ; Sagnik Dey ; Harshit Agarwal ; Ravi Goel ; Chenming Hu ; Yogesh Singh Chauhan
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,608 - 3,616
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2853989
Regular:

We present an analytical model that accurately captures anomalous matching characteristics of drain current in a halo-implanted MOSFET across bias, geometry, and temperature. It is shown that the... View More

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