IEEE - Institute of Electrical and Electronics Engineers, Inc. - Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts

Author(s): Xin Zhao ; Christopher Heidelberger ; Eugene A. Fitzgerald ; Wenjie Lu ; Alon Vardi ; Jesus A. del Alamo
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 65
Page(s): 3,762 - 3,768
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2859202
Regular:

Recently, sub-10-nm-diameter InGaAs vertical nanowire (VNW) MOSFETs have been demonstrated. The key to this achievement was the use of Ni for the top ohmic contact. In this paper, we present a... View More

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